奈米碳管控制成長之方法研究

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蘇清源(Ching-Yuan Su) 查詢紙本館藏

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機械工程學系

論文名稱

奈米碳管控制成長之方法研究
(Study for the controlled growth ofcarbon nanotubes)

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摘要(中)

奈米碳管於1991年發現以來，已經被證實具有多種獨特的材料性質，因此也被應用在許多的領域，然而如何控制奈米碳管之定位、定向及定量的成長，至今仍是奈米碳管於實際應用上的一個瓶頸。回顧過去文獻，已經有許多控制成長的方法被提出，但仍然無法提供一高良率且製程簡易之方法。因此探討奈米碳管控制成長之方法及其機制，是本論文的研究主題。
本論文提出三種定位成長奈米碳管的方法 : (1)引洞成長(CNTs growth in holes) (2)旋塗催化微粒(spin-on iron catalysts) (3)舉離法(lift-off method)。並以thermal CVD及MPCVD成長奈米碳管，探討電漿功率、成長溫度及碳源比例等參數，對奈米碳管結構及定位成長之影響。由實驗結果分析，引洞成長奈米碳管並以電子束鄰近效應縮小孔徑至0.1μm，可提高孔洞內成長單根奈米碳管之良率。此外，比較三種定位成長奈米碳管的方法，以舉離法可以定位成長高準直性且良率較高之單根奈米碳管。
而在定向成長奈米碳管的研究上，利用MPCVD之電漿鞘層所產生的自我偏壓，形成一個方向性的電場，而此電場主宰著奈米碳管成長的方向，利用此一機制可以控制奈米碳管具有方向性之成長。此外，經由實驗結果分析，在MPCVD成長奈米碳管的實驗，增加微波電漿功率可使奈米碳管的準直性及石墨化程度提高，並有較佳之場發射特性。

摘要(英)

none!!

關鍵字(中)

★ 控制成長
★ 電漿鞘層
★ 場發射
★ 方向性
★ 舉離法
★ 奈米碳管

關鍵字(英)

★ plasma sheath
★ lift off method
★ CNT
★ controlled growth
★ carbon nanotube
★ orientation
★ field emission

論文目次

摘要 Ⅰ
謝誌 Ⅱ
目錄 Ⅳ
表目錄 Ⅶ
圖目錄 Ⅷ
第一章緒論 1
1.1 前言 1
1.2 奈米碳管簡介 3
1.2.1 奈米碳管的晶體結構 3
1.2.2 奈米碳管之成長機制與合成技術 6
1.2.3 奈米碳管之獨特性質 12
1.2.4 奈米碳管的應用 15
1.3 文獻回顧 19
1.4 研究動機與目的 22
第二章實驗方法與原理 23
2.1 實驗架構 24
2.2 實驗儀器 25
2.2.1 製程設備 25
2.2.2 分析設備 30
2.2.3 實驗材料選擇 33
2.3 利用電子束微影定義孔洞圖案 34
2.3.1 電子束微影技術之原理 34
2.3.2 利用電子束鄰近效應縮小圖案尺寸 38
2.4 單因子實驗方法 40
2.5 電漿鞘層之形成 41
第三章結果與討論 42
3.1 引洞定位成長奈米碳管 42
3.1.1 試片準備與製程方法 42
3.1.2 溫度及碳源比例對奈米碳管之影響 46
3.1.3 成長單根碳管之最佳參數控制 50
3.2 利用電子束鄰近效應縮小孔徑之製程改善 52
3.2.1 電子束微影之光罩設計 52
3.2.2 試片準備與製程方法 54
3.2.3 成長溫度及碳源比例對奈米碳管結構之影響 57
3.2.4孔徑對成長單根奈米碳管之影響 58
3.3 旋塗催化微粒控制成長奈米碳管 59
3.3.1 試片準備與製程方法 59
3.3.2 電漿功率及成長溫度對奈米碳管直徑之影響 60
3.3.3 旋轉塗佈改善孔洞外催化微粒之分佈 69
3.4 舉離法定位成長奈米碳管 70
3.4.1 試片準備與製程方法 70
3.4.2 定位成長單根碳管之機制 73
3.5 電漿功率對奈米碳管特性之影響 75
3.5.1 試片準備及製程方法 75
3.5.2 電漿功率對奈米碳管準直性之影響 77
3.5.3 電漿功率對奈米碳管石墨化程度之影響 79
3.5.4電漿功率對奈米碳管場發射特性之影響 82
3.6 電漿鞘層對奈米碳管成長之影響 84
3.6.1電漿鞘層對奈米碳管方向性成長之影響 84
3.6.2 控制奈米碳管方向性成長之方法研究 88
第四章結論 90
參考文獻 91
作者簡介 100

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指導教授

黃豐元(Fuang-Yuan Huang)

審核日期

2005-7-1

推文