參考文獻 |
[1]史光國,“半導體發光二極體及固體照明”,全華圖書 (2010)
[2] 陸大成和段樹坤,“金屬有機化合物氣相外延基礎及應用”,科學出版社,第一版 (2009)。
[3] 張勁燕,“半導體製程設備”,五南 (2009)
[4]M. Razeghi, M. Henini, “Technology of MOCVD Production Tools,” Optoelectronic Devices: III-Nitrides, 1st ed. London, UK: ELSEVIER, 2004, ch. 4, sec. 4.2, pp. 40-67. [5]M. Mitrovic, A. Gurary, L. Kadinski, “On the flow stability in vertical rotating disc MOCVD reactors under a wide range of process parameters,” J. Cryst. Growth, vol. 287, pp. 656-663, Dec, 2006.
[6]Jingxi Sun, J. M. Redwing, and T. F. Kuech, “Model Development of GaN MOVPE Growth Chemistry for Reactor Design,” J. Electron. Mater. , vol. 29, no. 1, Jul, 2000.
[7]Chang-Yong Shin, Byung-Joon Baek, Cheul-Ro Lee, Bokchoon Pak, Jeong-Mo Yoon, Keun-Seop Park, “Numerical analysis for the growth of GaN layer in MOCVD reactor,” J. Cryst. Growth, vol. 247, pp. 301-312, Sep, 2003.
[8]Debasis Sengupta, Sandip Mazumder, William Kuykendall, Samuel A. Lowry, “Combined ab initio quantum chemistry and computational fluid dynamics calculations for prediction of gallium nitride growth,” J. Cryst. Growth, vol. 279, pp. 369-382, Feb, 2005.
[9]Rinku P. Parikh, Raymond A. Adomaitis, Michael E. Aumer, Deborah P. Partlow, Darren B. Thomson, Gary W. Rubloff, “Validating gallium nitride growth kinetics using a precursor delivery showerhead as a novel chemical reactor,” J. Cryst. Growth, vol. 296, pp. 15-26, Jul, 2006.
[10]M. Dauelsberg, C. Martin, H. Protzmann, A. R. Boyd, E. J. Thrush, J. Kappeler, M. Heuken, R. A. Talalaev, E. V. Yakovlev, A. V. Kondratyev, “Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors,” J. Cryst. Growth, vol. 298, pp. 418-424, Nov, 2007.
[11]Zhong Shuquan, Ren Xiaomin, Huang Yongqing, Huang Hui, Wang Qi, “Numerical studies on transport phenomena in LP-MOCVD reactor,” Sciencepaper Online, 2009.
[12]LIU Ruolei, YANG Ruichang, YOU Changfu, ZHAO Lei, ZHOU Tao, “Kinematic characteristics and thermophoretic deposition of inhalable particle in temperature gradient field,” J. CIESC., vol. 60, no. 7, pp. 1628, 2009.
[13]Ran Zuo, Haiqun Yu, Nan Xu, Xiaokun He, “Influence of Gas Mixing and Heating on Gas-Phase Reactions in GaN MOCVD Growth,” J. Solid State Sci. Technol., vol. 1, no. 1, pp. 46-53, 2012.
[14]DeWitt, Bergmann, Lavine, “Essential Concepts,” Fundamentals of Heat and Mass Transfer, sixth ed. New York: Wiley, 2007, ch. 1, sec. 1.2, pp. 3-9.
[15]Dimitrios I. FOTIADIS, Klavs F. JENSEN, “THERMOPHORESIS OF SOLID PARTICLES IN HORIZONTAL CHEMICAL VAPOR DEPOSITION REACTORS,” J. Cryst. Growth, vol. 102, pp. 743-761, Jan, 1990.
[16]Clayton T. Crowe, Donald F. Elger, Barbara C. Williams, John A. Roberson, “Fluid Properties,” Engineering Fluid Mechanics, 9th ed. New York: Wiley, 2010, ch. 2, sec. 2.2, pp. 16.
[17]Perry’s chemical engineers, 7th ed., McGraw-Hill, New York, 2007.
[18]P. D. Neufeld, A. R. Janzen, and R. A. Aziz, “Empirical Equations to Calculate 16 of the Transport Collision Integrals Ω for the Lennard-Jones (12-6) Potential,” J. Chem. PHys, vol. 57, pp. 1100, 1972.
[19]R. S. Brokaw, “Predicting Transport Properties of Dilute Gases,” Ind. Eng. Process Design Develop., vol. 8, pp. 240-253, 1969.
[20]Charles Hirsch, “Numerical Computation of Internal and External Flows,” Numerical Computation of Internal and External Flows, second ed. New York: Wiley, 2007.
[21]C. Theodoropoulos, T. J. Mountziaris, H. K. Moffat, J. Han, “Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy,” J. Cryst. Growth, vol. 217, pp. 65-81, Mar, 2000.
[22]S. Heikman, S. Keller, U. K. Mishra, “Vapor-phase epitaxy of gallium nitride by gallium are discharge evaporation,” J. Cryst. Growth, vol. 293, pp. 335-343, Jul, 2006.
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