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姓名	紀建榮(Jien-Rong Ji)  查詢紙本館藏	畢業系所	電機工程學系
論文名稱	具自動增益控制之高效率高功率寬頻放大器及Doherty功率放大器之研製 (Design of High Efficiency High Power Broadband Amplifiers with Automatic Gain Control and Doherty Power Amplifier)
相關論文	★ 微波及毫米波切換器及四相位壓控振盪器整合除三 除頻器之研製 ★ 微波低相位雜訊壓控振盪器之研製 ★ 高線性度低功率金氧半場效電晶體射頻混波器應用於無線通訊系統 ★ 砷化鎵高速電子遷移率之電晶體微波/毫米波放大器設計 ★ 微波及毫米波行進波切換器之研製 ★ 寬頻低功耗金氧半場效電晶體 射頻環狀電阻性混頻器 ★ 微波與毫米波相位陣列收發積體電路之研製 ★ 24 GHz汽車防撞雷達收發積體電路之研製 ★ 低功耗低相位雜訊差動及四相位單晶微波積體電路壓控振盪器之研究 ★ 高功率高效率放大器與振盪器研製 ★ 微波與毫米波寬頻主動式降頻器 ★ 微波及毫米波注入式除頻器與振盪器暨射頻前端應用 ★ 寬頻主動式半循環器與平衡器研製 ★ 雙閘極元件模型與微波及毫米波分佈式寬頻放大器之研製 ★ 銻化物異質接面場效電晶體之研製及其微波切換器應用 ★ 微波毫米波寬頻振盪器與鎖相迴路之研製
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摘要(中)	在通訊系統發射端中，功率放大器是相當重要的元件，其效率高低、頻寬及能否提供穩定輸出都是在發射端的重要主題。本論文針對功率放大器效率及回退功率的效率提升，加上考量現實發射端必須提供一個穩定輸出功率，應用了自動增益控制迴路於功率放大器之研製。 第二章為使用電抗補償之甚高頻 (VHF) E類功率放大器設計與實作，並使用Freescale公司製造之橫向擴散金氧半場效應電晶體 (LDMOS) 實作10 W及100 W寬頻功率放大器，飽和功率分別可達12 W及130 W，3 dB比例頻寬分別為45–175 MHz (123%) 與75–135 MHz (60%)，頻寬內最高效率分別在130 MHz可達到63% 及110 MHz達到76%，而頻寬內最高功率增益分別在105 MHz可達20.8 dB與100 MHz 達20.4 dB，當改變10 W功率放大器汲極直流電壓從20–50 V時，其增益控制範圍為16.6–21.4 dB (4.8 dB)。 第三章則延續第二章，將自動增益控制迴路應用於第二章所設計之功率放大器，以降低輸出功率受到輸入功率、頻率及溫度變動的影響，第三章中所設計的兩個迴路分別可以穩定輸出超過10 W與100 W，其輸入動態範圍分別在105 MHz為4.5 dB與120 MHz 為4.4 dB，而頻寬分別為90–130 MHz及100–130 MHz。 第四章則是介紹了 Doherty 功率放大器之設計，並使用橫向擴散金氧半場效應電晶體 (LDMOS) 實現了一個10 W 甚高頻(VHF) Doherty 功率放大器，在180 MHz 所量測之最高效率可達69%，6–dB回退功率之效率可達到41%，3 dB比例頻寬則可達50% (130–220 MHz)，頻寬內最高功率增益可達21.6 dB (180 MHz)，在180 MHz 增益1 dB 壓縮點輸出功率可達30.8 dBm，三階交調截取點 (Third-order Intercept Point) 輸出功率可達46.6 dBm。同時第四章也使用了0.15-μm 假晶式高速電子遷移率電晶體 (PHEMT) 積體電路製程實現一個於 K 頻段之 Doherty 功率放大器，最高小訊號增益達7 dB於26 GHz，量測到最高功率為114.8 mW，在25.8 GHz最高效率為16%。由於在 K 頻段之 Doherty 功率放大器進行電磁模擬時有地方考慮未周全，因此量測與模擬有落差，其原因亦在第四章中說明。 最後於第五章總結本篇論文所提出之電路與未來研究方向。
摘要(英)	The power amplifier is a critical building block in the RF transmitter. The efficiency、bandwidth and the ability of providing the stable output are essential issues for the power amplifiers. This thesis focuses on the efficiency and back-off power efficiency enhancement and the power amplifiers with automatic gain control loop to provide a stable output. The reactance compensation method is applied to the VHF class-E power amp lifers in chapter 2, and two 10 W and a 100 W broadband power amplifiers were implemented using Freescale laterally diffused metal oxide semiconductor (LDMOS) transistors. The 3 dB fractional bandwidth of 10 W and 100 W power amplifiers reaches 45–175 MHz (123%) and 75–135 MHz (60%) respectively, and the highest efficiency of 10 W and 100 W class-E power amplifiers in the 3 dB fractional bandwidth is 63% at 130 MHz and 76% at 110 MHz respectively, and the highest power gain in the 3 dB fractional bandwidth is 20.8 dB at 105 MHz and 20.4 dB at 100 MHz Gain control range of 10 W class E power amplifier is from 16.6 to 21.4 dB when DC drain voltage varying from 20–50 V. In chapter 3, the automatic gain control loop is applied to the power amplifiers implemented in chapter 2. The automatic gain control loop can alleviate the effect of input power variation on the output power. The output power of the loops are over 10 W and 100 W respectively, and the input dynamic ranges are 4.5 dB at 105 MHz and 4.4 dB at 120 MHz respectively. In chapter 4, the design of Doherty power amplifier is introduced, and a 10 W VHF Doherty power amplifier is implemented by using laterally diffused metal oxide semiconductor (LDMOS). The highest efficiency of the power amplifier measured at 180 MHz reaches 69%, and the efficiency at 6–dB back-off power is 41%, and the 3 dB fractional bandwidth is 50% (130–220 MHz), and the highest power gain in the 3 dB fractional bandwidth is 21.6 dB at 180 MHz, and the output power at 1 dB gain compression point is 30.8 dBm (at 180 MHz), and the output power at third-order intercept point is 46.6 dBm. A K-band Doherty power amplifier is also implemented by PHEMT technology in chapter 4, and the highest small signal gain reaches 7 dB at 26 GHz, but the negligence during the EM simulation results in the difference between simulation and measurement results, and the difference will be discussed in chapter 4. Lastly, the future work and the conclusions are made in chapter 5.
關鍵字(中)	★ E類功率放大器 ★ 高功率放大器 ★ 寬頻功率放大器 ★ 自動增益控制 ★ Doherty功率放大器	關鍵字(英)	★ class-E power amplifier ★ high power amplifer ★ broadband power amplifier ★ automatic gain control ★ Doherty power amplifer
論文目次	摘要 I Abstract III 致謝 V 目錄 VI 圖目錄 VIII 表目錄 XV 第1章 緒論 1 1.1 研究動機及背景 1 1.2 現況研究及發展 2 1.3 貢獻 3 1.4 論文架構 3 第2章 寬頻E類放大器 5 2.1 簡介 5 2.2 E類放大器 [33] 6 2.2.1 傳統E類放大器 6 2.2.2 使用電抗補償之寬頻E類放大器 15 2.3 電路設計與實作 26 2.3.1 甚高頻10 W E類功率放大器 26 2.3.2 甚高頻100 W E類功率放大器 36 2.4 總結 49 第3章 自動增益控制迴路 50 3.1 簡介 50 3.2 自動增益控制迴路分析與模擬 52 3.2.1 自動增益控制迴路穩定時間分析 52 3.2.2 使用線性可變增益放大器之穩定時間分析與模擬 55 3.2.3 使用指數可變增益放大器之穩定時間分析與模擬 56 3.2.4 所提出電路之轉移函數及穩定度分析與模擬 58 3.2.5 所提出電路之時域模擬 61 3.3 迴路元件介紹 64 3.3.1 自動增益控制迴路系統配置 64 3.3.2 可變增益放大器 65 3.3.3 方向耦合器 67 3.3.4 功率檢測器 71 3.3.5 比較器與緩衝放大器 73 3.3.6 明緯電源供應器 75 3.4 電路實作與量測 76 3.5 總結 80 第4章 Doherty 功率放大器 81 4.1 簡介 81 4.2 Doherty 功率放大器運作原理 83 4.3 電路設計與量測結果 86 4.3.1 設計流程 86 4.3.2 使用LDMOS之10 W甚高頻Doherty功率放大器 88 4.3.3 使用穩懋 E/D-mode之K頻段Doherty功率放大器 103 4.4 總結 111 第5章 結論 113 參考文獻 115
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指導教授	張鴻埜(Hong-Yeh Chang)	審核日期	2016-10-19
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