在本論文中，利用低壓化學氣相沈積系統沈積複晶矽鍺團並藉由氧化之方式形成鍺奈米晶粒製作出鍺浮點記憶體。在製作過程中，我們利用橢圓儀開發了非破壞性的表面狀態檢測方法，以判別晶粒形成與否。此外，鍺浮點記憶體在閘極蝕刻這部分也是製程中之重要關鍵，因為鍺浮點記憶體閘堆疊層中之鍺奈米晶粒是否蝕刻乾淨會嚴重影響後續之製程與元件特性。 在製作鍺浮點記憶體之同時，我們也製作了矽鍺浮閘記憶體、矽鍺浮閘電容和鍺浮點電容。我們利用製作出來之元件做了以下幾項電性量測包含：電容量測、儲存時間量測、脈波量測、耐用性量測等。藉由以上之量測，我們可以清楚知道我們製作元件之特性，並得知影響元件特性之原因與元件結構之關鍵點。 Abstract In this thesis, we utilize the method of thermal oxidation poly SiGe to form Ge nanocrystals and then fabricate the Ge nanocrystals transistor. In the process of fabrication, we have also developed the undestructive method to check surface state of the sample by Ellipsometer. Besides, the gate etching in formation of Ge nanocrystals transistor is very important. Because removing Ge nanocrystals embedded in gate stacked greatly effects the following fabrication and characteristics of device. We have fabricated Ge nanocrystals MOS capacitors and FET by using the method of thermal oxidation poly SiGe to form Ge nanocrystals. After formation, we take some measurements included capacitance measurement, Retention time measurement, pulse width measurement and endurance measurement. According to the result of measurements we can easily realize the characteristics of our device and the problems of device structure.
