以磷化銦為基材橫向接面紅外光白光二極體; InP Based Transverse Junction Light-Emitting-Diodes for White-Light Generation at Infrared Wavelengths

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > Electronic Thesis & Dissertation > Item 987654321/10033

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/10033

Title:	以磷化銦為基材橫向接面紅外光白光二極體;InP Based Transverse Junction Light-Emitting-Diodes for White-Light Generation at Infrared Wavelengths
Authors:	洪梓健;Tzu-Jien Hung
Contributors:	電機工程研究所
Keywords:	橫向接面二極體;鋅擴散;多重量子井;MQW;zinc diffision;Transverse Junction diode
Date:	2005-06-28
Issue Date:	2009-09-22 12:04:12 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	吾人製作出橫向接面紅外光白光二極體，其橫向接面結構由鋅擴散來達成，發光波長由主動層之量子井設計決定，由於橫向P-N接面使得主動層中，所有量子井發光功率可以有相近的能量，以製作出每一個波長強度相同，及極寬的3db頻寬~580nm，吾人由最佳條件550℃-40分鐘鋅擴散，完成一元件且得到光譜半高寬為580nm在驅動電流為60mA，波長從1042nm ~1622nm的發光二極體。 We demonstrate a novel structure of light-emitting-diodes (LEDs) at infrared wavelengths for broadening their optical bandwidth performance. By incorporating the transverse p-n junction with multiple-quantum-wells (MQWs), which have different center wavelengths, the problems of non-uniform carrier distribution in the MQWs of traditional LEDs with vertical p-n junction can be totally eliminated. Tremendous wide 3-dB optical bandwidth (~580nm, 1042nm~1622nm) under 60mA injected current has been demonstrated.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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