| 摘要: | 此篇論文描述了數個應用於微波存取全球互通系統之射頻電路設計，分別以TSMC 0.18 μm CMOS製程與TSMC 0.35 μm SiGe BiCMOS製程來實現，所實現電路有兩個前向匯入式功率放大器、兩個Class F類功率放大器、四相位壓控振盪器與考畢茲壓控振盪器電路。兩個前向匯入式功率放大器與兩個Class F類功率放大器，採用二階式發射機的系統架構上，應用在2.6 GHz頻段為了行動式微波存取全球互通系統需求。而四相位壓控振盪器與考畢茲壓控振盪器，採用鏡像消除式架構降頻器的超外插接收機架構上，分別應用在3220 ~ 3300 MHz頻段與6440 ~ 6600 MHz的頻段上，用來當作固定式微波存取全球互通系統的應用。以下依各章節不同的電路來分類，概述論文中各電路的實際量測結果。 第二章為射頻發射機子電路的設計，包括了兩個前向匯入式功率放大器與兩個Class F類功率放大器，每一種型態的功率放大器，都分別採用TSMC 0.18 μm CMOS製程與TSMC 0.35 μm SiGe BiCMOS製程來實現。以TSMC 0.35 μm SiGe BiCMOS製程實現的前向匯入式功率放大器而言，約有12.4 dB的增益、大於10 dB輸入回返損耗、約9.3 dB的輸出回返損耗、20.3 dBm的輸出1-dB增益壓縮點、33 dBm的輸出三階截斷點、1-dB增益壓縮點的功率增進效率為19.2 %；以TSMC 0.18-μm CMOS製程實現的前向匯入式功率放大器而言，約有12.2 dB的增益、約4.7 dB輸入回返損耗、大約10.3 dB的輸出回返損耗、22.1 dBm的輸出1-dB增益壓縮點、33.2 dBm的輸出三階截斷點、1-dB增益壓縮點的功率增進效率為26.6 %；以TSMC 0.18 μm CMOS製程實現的Class F類放大器而言，有13.1 dB的增益、約9 dB輸入回返損耗、大約15.3 dB的輸出回返損耗、20.2 dBm的輸出1-dB增益壓縮點、25.4 dBm的輸出三階截斷點、1-dB增益壓縮點的功率增進效率為24.4 %；以TSMC 0.35 μm SiGe BiCMOS製程實現的Class F類放大器而言，有18.3 dB的增益、大於15 dB輸入回返損耗、約6.6 dB的輸出回返損耗、20.6 dBm的輸出1-dB增益壓縮點、30.8 dBm的輸出三階截斷點、1-dB增益壓縮點的功率增進效率為25.8 %。 第三章則為壓控振盪器的設計，一個是四相位震盪器用在3220 ~ 3300 MHz的頻段上，一個是考畢茲壓控振盪器用在6440 ~ 6600 MHz頻段上。四相位壓控振盪器具有214 MHz的可調範圍，輸出功率為-9 ~ -5 dBm，離主頻1 MHz之相位雜訊為-110.875 dBc/Hz，振盪器本身消耗功率為9.94 mW；而考畢茲壓控振盪器，可調範圍為354 MHz，輸出功率為-11.7 ~ -11 dBm， 離主頻1 MHz之相位雜訊為-122 dBc/Hz，振盪器的本身消耗功率為19.1 mW。 This thesis describes several radio frequency circuit designs for WiMAX applications. They are implemented in TSMC 0.35 ?m SiGe BiCMOS and 0.18 ?m CMOS technologies, respectively. The implemented circuits include two Feed-forward power amplifiers, two Class F power amplifiers, a quadrature voltage controlled oscillator (QVCO), and a Colpitts VCO. Two 2.6 GHz Feed-forward and two Class F power amplifiers are realized in the two-step transmitter architecture for mobile WiMAX system requirements.The QVCO and Colpitts VCO are realized in super-heterodyne architecture with image rejection mixer, their operating frequencies are 3220 ~ 3300 MHz and 6440 ~ 6600 MHz, respectively. The following sections will summarize the practical measured results which will be thoroughly presented in following chapters. Chapter 2 introduces the designs of sub-circuits of radio frequency transmitter, including two feed-forward power amplifiers and two Class F power amplifiers. These power amplifiers are implemented in TSMC 0.35 ?m SiGe BiCMOS and 0.18 ?m CMOS technologies, respectively. The feed-forward power amplifier implemented in 0.35 ?m SiGe BiCMOS technology provides a power gain of 12.4 dB with input return loss better than 10 dB, output return loss of 9.3 dB and, an output P1dB of 20.3 dBm, an output IP3 of 33 dBm, a PAE@ P1dB of 19.2 %. The CMOS feed-forward power amplifier provides a power gain of 12.2 dB with input return loss about 4.7 dB, an output return loss of 10.3 dB, an output P1dB of 22.1 dBm, an output IP3 of 33.2 dBm, a PAE@ P1dB of 26.6 %. The CMOS Class F power amplifier implemented provides a power gain of 13.1 dB with input return loss about 9 dB, an output return loss of 15.3dB, an output P1dB of 20.2 dBm, an output IP3 of 25.4 dBm, a PAE@ P1dB of 24.4 %. The SiGe Class F power amplifier provides a power gain 18.3 dB with input return loss better than 15 dB, an output return loss of about 6.6 dB, an output P1dB of 20.6 dBm, an output IP3 of 30.8 dBm, a PAE@ P1dB of 25.8 %. Chapter 3 introduces the designs of VCOs, including QVCO for 3220 ~ 3300 MHz band, and Colpitts VCO for 6440 ~ 6600 MHz band. The QVCO achieves a tuning range of 214 MHz, an output power of -9 ~ -5 dBm, The phase noise at 1 MHz offset carrier frequency is -110.875 dBc/Hz under a power consumption of the VCO core of 9.94 mW. The Colpitts VCO achieves a tuning range of 354 MHz, an output power of -11.7 ~ -11 dBm, The phase noise at 1MHz offset carrier frequency is -122 dBc/Hz under a power consumption of the VCO core of 19.1mW. |
