目前光子晶體在光學及光電領域的應用非常廣泛，隨著世界各先進在光子晶體領域不斷鑽研與大量心血的投入，光子晶體元件的設計與製作技術已愈趨精良，然而，為了要讓光子晶體元件真正邁入實用的里程碑，得思考如何簡化製作流程、提高其生產效率，進而達到降低生產成本的目標。因此，本論文致力於以奈米級線寬微影技術應用於光子晶體元件的設計與製作之研究工作。 本實驗係以SOI (Silicon On Insulator) 為基板材料，使用新興的二種奈米級微影技術: 分別以電子束微影技術實作光子晶體波長分波器，及使用奈米壓印微影技術製作光子晶體極化濾波器。其中波長分波器是針對1.55μm和1.31μm二種波長作設計，具有解調分離訊號的功能; 而極化濾波器則是針對TM極化的光波作設計，具有光通訊用寬頻段的濾波功能。 在奈米壓印製程部分將從選擇製程材料緣由談起，將製程中各個步驟所遭遇的問題詳細說明探討，並研析解決方法。在量測部分，使用波導量測系統進行量測工作，由頻譜分析圖得知波長分波器的分波效率與模擬結果相符，有效表現出分離光波訊號的功能; 在極化濾波器部分，其數據顯示光子晶體結構可確實發揮出極化濾波的功效。經本文探討結果，証實上述兩種微影技術已經可以實際應用於奈米級線寬元件的製作工作。 In this study, photonic crystal wavelength division multiplexer (WDM) and polarization filter based on SOI substrate have been demonstrated. The WDM is used to separate the electromagnetic wave at the wavelength of 1.55μm and 1.31μm. The polarization filter can be applied to leach the optical signal of TM polarization in the range of wavelength 1.3μm ~2.1μm. We use the plane wave expansion method (PWE) to simulate the band-gap distribution of the periodical arrayed structure and used finite-differential time-domain (FDTD) method to study the steady state electromagnetic wave propagation simulation. The WDM was fabricated by e-beam lithography and polarization filter was processed by a novel technology “nano-imprint lithography” which has several extremely ascendant advantages: simple process, low production cost and high throughput efficiency. Waveguide measurement system was used in this experiment. The measurement result shows that the performance of the WDM and the polarization filter are both good. So it means that the design of the devices structure and devices process are successful in this study. And it is expectable that more and more nano-scale devices can be fabricated by E-beam lithography and NIL process by consulting the process parameters in this study.
