短波長光通訊之矽標準製程光檢測器; Photodetectors Fabricated by Standard Silicon Process Technology

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Title:	短波長光通訊之矽標準製程光檢測器;Photodetectors Fabricated by Standard Silicon Process Technology
Authors:	劉玉章;Yu-chang Liu
Contributors:	電機工程研究所
Keywords:	高速;標準製程;光檢測器;雪崩二極體;雪崩區;光二極體;高響應度;矽;高頻寬;high speed;high responsivity;high bandwidth;avalanche;avalanche photodiode;standard process;photodiode;CMOS;silicon;photodetector
Date:	2007-06-28
Issue Date:	2009-09-22 12:07:15 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	本論文利用0.18 um CMOS及0.35 um BiCMOS標準製程實現光檢測器。在BiCMOS光檢測器部分，使用SiGe 高崩潰HBT製程中Base及Collector所形成之二極體，並利用Local Collector區域吸收光。在11.06V的逆偏壓下，響應度為0.26 A/W，頻寬為1.65 GHz，操作資料速率為1.25 Gb/s。在CMOS光檢測器部分，使用n型、p型井製程及離子佈值製作光檢測器元件。元件操作在雪崩崩潰區域時，由於漂移載子的劇烈增加減少了慢速擴散載子的影響，因此光檢測器的頻寬得以大幅增加。結果可得到文獻最高記錄頻寬為1.6 GHz及最高操作資料速率為3.5 Gb/s。此論文中還提出使用Body Contact對前述CMOS光檢測器改善。當外加偏壓至Body Contact時，在光檢測器的下方會形成一電流路徑而有效消除慢速擴散載子，得以增加光檢測器頻寬及速度。當Body 偏壓為10 V時，可得到頻寬為2.8 GHz，並且操作資料速率可至 5 Gb/s。除此之外，論文中亦分析出漂移載子的比例，結果顯示：一、當操作在雪崩崩潰區域時，漂移載子的比例將遠大於擴散載子的比例，因此光檢測器的頻寬得以提升；二、加入Body偏壓時，光檢測器下方的電流後可以掃除慢速擴散載子，且元件並不需要操作在雪崩崩潰區域即可得到高比例的漂移載子，證明本論文所提出的改善方法相當有效。 This work demonstrates photodiodes (PDs) fabricated by standard silicon process technologies. Two kinds of PDs are proposed. One is in CMOS technology and the other is in BiCMOS technology. We show a good responsivity, record high bandwidth (1.6 GHz) and record high data rate (3.5 Gb/s) from the CMOS PD which is operated in avalanche region and the breakthrough results are published in IEEE Photonics Technology Letters. Moreover, we remove the slow diffusion carriers which are generated from substrate in CMOS PD by using body contact design with supplied voltage to create a current path under the device. And those slow carriers are swept into the current flow to ground (p-contact). It results in better pulse response and removes the long tail compared to PD with floating body voltage (VB) in pulse measurement. Finally, the PD with VB = 10 V shows another record high bandwidth of 2.8 GHz and record high eye diagram of 5 Gb/s. Besides, the BiCMOS PD is proposed from modifying the SiGe HBT layout without emitter region. It shows a responsivity of 0.26 A/W at VR of 11.06 V and the 1.25 Gb/s eye diagram is also obtained.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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