以砷化鎵為基材在1060nm波段側向接面超螢光白光二極體; GaAs-based transverse current injection light emitting diodes at the wavelength 1060nm

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Title:	以砷化鎵為基材在1060nm波段側向接面超螢光白光二極體;GaAs-based transverse current injection light emitting diodes at the wavelength 1060nm
Authors:	陳岳毅;Yueh-Yi Chen
Contributors:	電機工程研究所
Keywords:	側向接面;超螢光發光二極體;砷化鎵;superluminescent diode;GaAs;transverse junction
Date:	2007-07-06
Issue Date:	2009-09-22 12:07:33 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	在本論文裡，我們比較了側向p-n接面與一般垂直p-n接面元件之特性，一般的垂直接面發光二極體，在多重量子井中會有載子分佈不均勻的問題，可藉由側向接面元件消除，側向接面元件展現了穩定且平坦的光譜頻寬，在大偏壓電流操作下，3-dB頻寬為165nm，中心波長在1060nm附近，其3-dB頻寬對擴散深度及加入的偏壓電流不敏感，且頻寬有飽和之現象，此說明載子均勻分佈之重要性。 In this thesis, we compared performance of our demonstrated transverse p-n junction devices to those traditional vertical ones. The nonuniform carrier distribution problem that occurs in the multiple quantum wells (MQWs) of traditional vertical p-n junction LEDs can be totally eliminated by introducing a transverse p-n junction with MQWs combining with different emission wavelengths. These devices exhibit stable, flattened, and invariant broadband optical spectrum with maximum 3-dB bandwidth of 165nm around the wavelength of 1.06μm under a large bias current operation. The bandwidths of devices are not sensitive to diffusion depth and bias currents, revealing the improvement of uniform distribution of carriers.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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