以矽鍺為材料，用於850nm短距光纖通訊超高增益頻寬積(428GHz)的累增崩潰光二極體; Using SiGe based avalanche photodiode operating at a wavelength of 850 nm with a gain-bandwidth product of 428 GHz

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > Electronic Thesis & Dissertation > Item 987654321/10249

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/10249

Title:	以矽鍺為材料，用於850nm短距光纖通訊超高增益頻寬積(428GHz)的累增崩潰光二極體;Using SiGe based avalanche photodiode operating at a wavelength of 850 nm with a gain-bandwidth product of 428 GHz
Authors:	李宗儒;Zong-ru Li
Contributors:	電機工程研究所
Keywords:	累增光二極體;矽鍺;photodiode;SiGe.avalanche
Date:	2007-07-04
Issue Date:	2009-09-22 12:09:54 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	在本論文研究中，我們提出了一個可操作在830nm波段的矽-矽鍺垂直入射的雪崩光二極體。我們的元件可以藉由操作在崩潰區而最小化因N型基板所產生的擴散電流而造成的低頻roll-off的問題，同時也可以藉由衝擊離子的效應而產生高輸出頻寬。所以我們的元件可以在不使用複雜的SOI技術之下，而達到高輸出頻寬(15.3GHz)以及極高的增益頻寬積(428GHz)。 In this thesis, we demonstrate a high-performance Si–SiGe-based vertical-illuminated avalanche photodiode (APD) operating in the 830-nm wavelength regime. Under avalanche operation, the low-frequency roll-off caused by the slow diffusion current from the n+ silicon substrate can also be minimized. Also, our device can achieved high bandwidth due to impact-ionization-induced resonant effect. So, a wide bandwidth (15.3 GHz) and an extremely high gain-bandwidth (428 GHz) can be achieved simultaneously in our device without using complex silicon-on-insulator or germanium-on-insulator substrates.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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