本論文主要研究內容為氮化鎵基材電晶體(GaN-based Transistors)的製作與量測分析，研究內容分為兩個部分：(1) 平台式氮化鋁鎵/氮化鎵異質接面雙載子電晶體(Mesa-type AlGaN/GaN Heterojunction Bipolar Transistors) (2) 平面式氮化鎵雙載子接面電晶體(Planar-type GaN Bipolar Junction Transistors)。提出以有機金屬化學氣相磊晶系統(Metal-organic Chemical Vapor Deposition, MOCVD)成長於藍寶石(Sapphire)的基板，製作出氮化鎵基材電晶體，並針對元件進行直流量測、分析與討論。 平台式氮化鋁鎵/氮化鎵異質接面雙載子電晶體量測部份主要以室溫直流量測，量測的射極面積為110×110 μm2，電晶體在VBE ＝0.9 V時的電流增益為4.3，崩潰電壓為3 V。另外，由於基極區p型氮化鎵有較低電洞濃度，導致有較差歐姆接觸特性及較大之電阻。為了避免基極區p型氮化鎵乾蝕刻所造成的表面損傷，因此利用離子佈植方式，將高能量矽(Si)離子直接植入晶體中，製造出平面式氮化鎵雙載子接面電晶體，並且探討雙載子接面電晶體的製造技術與元件分析。 This project focused on fabrication of GaN-based transistors and its measurement, which are to be elaborated in two kinds── (1) Mesa-type AlGaN/GaN heterojunction bipolar transistors (HBT), and (2) Planar-type GaN bipolar junction transistors (BJT). The way to the ultimate target, GaN-based transistors, is to epitaxy GaN material on sapphire substrates through metal-organic chemical vapor deposition technology (MOCVD). Detailed analysis and discussion would be made later after the device underwent DC measurement. The measurement of the mesa-type AlGaN/GaN heterojunction bipolar transistors mainly takes the room temperature DC gauging, with 110×110 μm2 emitter area. The current gain of the transistor in Gummel plot is 4.3 with the VBE ＝0.9 V, the break-down voltage of which is 3 V. Moreover, the lower hole concentration of the base region p-type GaN leads to worse ohmic contact characteristic and a large resistance. Therefore, to avoid the damage caused by the dry etching on the base region p-type GaN, ion implanter is administered. Silicon (Si) ion implanted upon the sample with high energy recipe, bringing out planar-type GaN bipolar junction transistors, the characteristics of which will be discussed later and analyzed in detailed figures.
