非揮發性鍺量子點掩埋於二氧化矽/氮化矽複合穿隧介電層之MOS電容研製與載子傳輸機制之探討; Fabrication and Carrier Transport Mechanism of Nonvolatile Germanium Quantum Dots Imbedded in Oxide-Nitride Composite Tunnel Dielectric MOS-Capacitors

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > Electronic Thesis & Dissertation > Item 987654321/10331

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/10331

Title:	非揮發性鍺量子點掩埋於二氧化矽/氮化矽複合穿隧介電層之MOS電容研製與載子傳輸機制之探討;Fabrication and Carrier Transport Mechanism of Nonvolatile Germanium Quantum Dots Imbedded in Oxide-Nitride Composite Tunnel Dielectric MOS-Capacitors
Authors:	許書豪;Shu-Hao Hsu
Contributors:	電機工程研究所
Keywords:	非揮發性記憶體;nonvolatile memory
Date:	2008-07-15
Issue Date:	2009-09-22 12:12:38 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	本論文旨在探討單層和雙層鍺量子點的閘堆疊，高介電係數材料應用，以及由兩個不同能隙的介電層堆疊，所產生的階梯形能障所帶來的優缺點，並藉由分析載子在複合介電層的傳輸機制，來了解電荷在複合穿隧介電層的傳輸機制對非揮發記憶體的效能影響。在分析後可以知道，在元件操作的電場區域，電子在介電層的傳輸機制，單層是氮化矽F-P穿隧與二氧化矽F-N穿隧的串聯，由氮化矽主導；雙層亦是氮化矽F-P穿隧與二氧化矽穿隧的串聯，由二氧化矽主導。 This article investigates the integration of multi-layer Ge QDs, high-K material, composite dielectrics and stair-case energy barrier for nonvolatile memory, and analyzes the advantages and disadvantages of the MOS-capacitors with these terms of charge storage, retention, and endurance. Furthermore, we analyze the carrier transport mechanism in the composite dielectrics.
Appears in Collections:	[電機工程研究所] 博碩士論文

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