兩段整合光注入式1.55μm高速半導體雷射; High-Speed Two Sectional Integrated Optical Injection Semiconductor Lasers at 1.55μm Wavelength

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题名:	兩段整合光注入式1.55μm高速半導體雷射;High-Speed Two Sectional Integrated Optical Injection Semiconductor Lasers at 1.55μm Wavelength
作者:	鄭皓仁;Hao-jen Cheng
贡献者:	電機工程研究所
关键词:	光注入式;高速;半導體雷射;semiconductor laser;optical injection;high speed
日期:	2008-07-09
上传时间:	2009-09-22 12:13:01 (UTC+8)
出版者:	國立中央大學圖書館
摘要:	在光纖通訊中，雷射的調制頻寬關係著資料量傳輸的速度，而光注入式鎖態雷射結構，擁有增加共振頻率的特性，然而其結構需要一支外部雷射注入，在實際應用上是非常麻煩的，因此我們提出兩段整合光注入式以InAlGaAs多重量子井的Fabry-Perot半導體雷射，此結構整合光注入式鎖態雷射結構，因此不需要額外的外部雷射注入，可以單一晶片封裝，且不需要光阻絕器或光循環器，也無對光的問題存在，此元件的共振頻率最高可以達到41GHz，在頻率響應上相對於無外部雷射注入時，直接調變的頻寬可以有兩倍的增加，達到20GHz的頻寬。 As the application of optical communication system, the modulation bandwidth of laser has great effect on data transmission speed. With the view of that, the laser with optical injection-locked structure is proposed to enhance speed performance by use of adding resonance frequencies in semiconductor lasers. However, this structure needs an external injection from other laser cavity, resulting in huge cost, and inconvenience. In spite of it, in this thesis, we demonstrate a novel InAlGaAs-MQW Fabry-Perot laser with the structure of monolithic optical injection. It can enjoy the advantage such as single chip package, needless of optical isolator or circulator, automatic optical alignment, and environmentally robust. The device can achieve high resonance frequency at 41GHz, and comparing with non optical injecting, directly modulation bandwidth has twice improvement to 20GHz.
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