毫米波頻段差動式注入鎖態除頻器及頻率合成器之應用; Millimeter-wave Differential Injection-Locked Dividers and Application to Frequency Synthesizer

NCU Institutional Repository > 資訊電機學院 > 電機工程研究所 > 博碩士論文 > Item 987654321/10416

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/10416

题名:	毫米波頻段差動式注入鎖態除頻器及頻率合成器之應用;Millimeter-wave Differential Injection-Locked Dividers and Application to Frequency Synthesizer
作者:	李冠德;Kuan-te Lee
贡献者:	電機工程研究所
关键词:	低通濾波器;頻率相位比較器;充電汞;真單相時脈;可程式除頻器;頻率合成器;注入式鎖態除頻器;鎖態範圍;charge pump;phase frequency detector;low pass filter;locking range;True Single-Phase Clock;frequeccy synthesizer;programmable divider;injection-locked frequency divider
日期:	2009-07-02
上传时间:	2009-09-22 12:16:08 (UTC+8)
出版者:	國立中央大學圖書館
摘要:	近年來無線通訊快速的進步，應用於微波與毫米波頻段的接收機模組也日趨重要。為了使無線收發端得到低相位雜訊與低消耗功率的純淨訊號源，注入式鎖態除頻器已逐漸被應用於微波及毫米波上。在本論文中，我們將提出兩種不同形式的注入式鎖態除頻器的架構，再搭配差動注入訊號的方式，可提高輸入功率的大小來增加鎖態範圍的大小。並利用差動注入訊號的方式也能改善輸出功率平坦度的問題，使在電路應用上更加實用。在本論文當中透過TSMC 0.18 μm CMOS 與WIN 0.5 μm GaAs E/D mode pHEMT 的製程與精確的模擬，設計出應用於K/K-band、V-band 與U-band 等頻段的注入式鎖態除頻器，並實作出低相位雜訊、寬鎖態範圍、低功率消耗與寬輸出功率平坦度的注入式鎖態除頻器。此外，我們將應用K/Ka-band 的注入式鎖態除頻器整合於頻率合成器當中，並且當調整可程式除頻器的除數時，在振盪器的頻率可調範圍內可以產生四個不同的頻率輸出。 As the wireless communications are rapidly progressing, the microwave and the millimeter-wave transceivers are the essential modules in the wireless communications. In order to obtain a pure signal source, the outstanding phase noise and low power consumption characteristics are always demanded for wireless transceivers. The injection-locked dividers have been demonstrated and realized in the microwave and the millimeter-wave applications.In this thesis, we proposed two different types of injection-locked dividers, which used the differential injecting signal to improve the bandwidth of locking range with increasing input power. Moreover, using the differential signal could also obtain flatter output power. This makes more realistic for integration circuit applications. In this thesis, the injection-locked dividers have been achieved for K/Ka and V band applications fabricated by TSMC 0.18μm CMOS, and for Q-band application fabricated by WIN 0.5μm GaAs E/D mode pHEMT process. The implemented injection-locked dividers have low phase noise, wide locking range,low power consumption, and flat output power performance through designed and extensive simulation. In addition, a K/Ka-band injection-locked divider has been integrated in a frequency synthesizer, which could show four different frequencies with adjusting the programmable divider among the VCO tuning range.
显示于类别:	[電機工程研究所] 博碩士論文

文件中的档案:

档案	大小	格式	浏览次数

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing

数据加载中.....