次微米氮化鎵電晶體之製程與特性分析; The Device Fabrication and Characteristic of Sub-micron GaN HEMT

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Title:	次微米氮化鎵電晶體之製程與特性分析;The Device Fabrication and Characteristic of Sub-micron GaN HEMT
Authors:	楊傑甯;Jie-ning Yang
Contributors:	電機工程研究所
Keywords:	氮化鎵;電晶體;GaN;HEMT
Date:	2009-07-02
Issue Date:	2009-09-22 12:16:18 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	近年來，能源問題越來越被人們所重視，使得在對半導體元件上之功率的要求也與日俱增。相較於傳統矽基材料，氮化鎵材料由於先天的材料優勢及特性，如:高耐熱、高崩潰電壓、高電子飽和速度、優秀的壓電效應以及高電流密度，使得在高速、高功率的應用上成為極佳的選擇，尤其適合像是在汽車電子高溫高功率的環境。本論文為了實現高速、高電壓操作之氮化鎵高電子移動率功率電晶體，利用電子束微影系統(E-Beam Writer)製作特殊結構之次微米尺寸的電晶體。並利用氮化矽鈍化層製程對元件進行鈍化(passivation)製程，以改善在氮化鎵系統所一直被詬病的表面狀態以及高頻操作時的電流崩潰現象；配合主動元件之鈍化層製程，製作被動元件，並以模擬軟體設計電路，希望將主被動元件在藍寶石基板上整合成一放大器。 In recent years, how to obtain a high power of semiconductor device is the major challenge in modern semiconductor application. The gallium nitride (GaN) device has outstanding electrical characteristics in comparison with silicon base device, such as temperature stability, high breakdown voltage, high electron velocity, and stronger piezoelectric effect due to nature of material properties. These advantages enable GaN HEMT to be a good candidate for high-speed, high power, and high-temperature applications. In this thesis, we demonstrated the high speed and high power GaN HEMT fabricated with the sub-micron T-shape gate by the electron beam lithography. The additional passivation layer using the silicon nitride material on device surface reduces the surface trap effect and improve the current collapse drawback. Moreover, the passive and active components are fabricated on the same sapphire substrate for amplifier application. The passive components include resistor, capacitor, and inductor with model parameters from various sizes consideration.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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