我們證明了在砷化鎵/砷化鋁鎵（GaAs/AlGaAs）的基板上，完成了高速單戴子傳輸光檢測器和使用鋅擴散的面射型雷射的積體化整合，面射型雷射有很高的資料傳輸與功率消耗的比值(2.4Gbps/mW)，而單載子傳輸光檢測器可在無外加偏壓下操作，如此一來可應用在雙向傳輸的光連結技術上。積體化的單戴子傳輸光檢測器量子效率可以達到46.7%，也有很高的3dB 頻寬(13Gbit/s），且從低到高的光電流(0.1 to 0.4mA)，都可以打開10Gbit/s的眼圖，不需要額外的驅動電路。而積體化的面射型雷射也可以通過10Gbit/s的眼圖，在很低的操作電流下(3mA)，而且只需要很低的交流調變的高頻訊號(0.25Vp-p驅動)就可以打開眼圖。 We demonstrate the monolithic integration of high-speed GaAs/AlGaAs based uni-traveling carrier photodiode (UTC-PDs) with Zn-diffusion vertical-cavity surface-emitting lasers (VCSELs) both with very-high data-rate/power-consumption ratio for the application to bi-directional optical interconnect Under zero-bias operation, the integrated UTC-PD exhibits reasonable external efficiency (46.7%), wide 3-dB bandwidth (13GHz) and 10Gbit/sec eye-opening from low to high output photocurrents (0.1 to 0.4mA) without integrating with any active integrated circuits (ICs). Regarding with the integrated Zn-diffusion VCSEL, it can achieve 10Gbit/sec eye-opening under a pre-bias current as small as 3mA and a very-small radio-frequency (RF) driving voltage （0.25Vp-p driving-voltage）. The data-rate/power-consumption ratio of the VCSEL is extremely-high, as much as 2.4Gbps/mW.
