English  |  正體中文  |  简体中文  |  Items with full text/Total items : 65421/65421 (100%)
Visitors : 22310571      Online Users : 84
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/26370


    Title: Boron-Induced Strain Relaxation in Hydrogen-Implanted SiGe/Si Heterostructures
    Authors: Lee,SW;Chueh,CA;Chang,HT
    Contributors: 化學工程與材料工程學系
    Keywords: BUFFER LAYER;HIGH-QUALITY;DISLOCATION-DENSITY;GROWTH;SI;SILICON;GE;FILMS
    Date: 2009
    Issue Date: 2010-06-29 17:26:32 (UTC+8)
    Publisher: 中央大學
    Abstract: The strain relaxation behavior of H-implanted Si0.8Ge0.2/Si heterostructures containing a B-doped Si buffer layer was investigated. The annealed H-implanted SiGe/Si samples with a B-doped Si buffer layer exhibit an additional relaxation compared to those with an undoped Si buffer layer. At an annealing temperature of 900 degrees C, relaxation ratios of the H-implanted samples with and without a B-doped Si buffer layer were determined to be 79 and 53%, respectively. The increased relaxation can be attributed to the formation of the larger H-filled bubbles along the interface on both sides of the B-doped Si region. Such an annealed H-implanted SiGe/B-doped Si heterostructure was further demonstrated to have a threading dislocation density of 4.7 X 10(5) cm(-2) with a root-mean-square roughness of only 0.48 nm. This work offers an effective approach to fabricate high quality strain-relaxed thin SiGe epilayers for high mobility device applications. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3236680]
    Relation: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    Appears in Collections:[化學工程與材料工程研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML549View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明