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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/26410

    Title: On the structure and characterization of Al, Sc-co-doped ZnO-films varying with 0-2.37 wt.% Sc contents
    Authors: Lin,JC;Peng,KC;Yeh,TY;Lee,SL
    Contributors: 化學工程與材料工程學系
    Date: 2009
    Issue Date: 2010-06-29 17:27:25 (UTC+8)
    Publisher: 中央大學
    Abstract: Thin films of Al, Sc-co-doped ZnO varying with Sc-contents were sputtered on the glass substrate. X-ray diffraction (XRD) of the films revealed wurtzite crystals that were confirmed through the analysis of high resolution transmission electron microscopy (HRTEM). With increasing the Sc-content from 0 to 2.37 wt.% in the films, the optical energy band gap (Eg) was estimated to decrease from 3.25 to 3.20 eV, and the electrical resistivity (Omega cm) decreased from 3.8 x 10(-3) to 1.3 x 10(-3). The decrease in resistivity may be ascribed to electrons tunneling through the horizontal stacking faults induced by Sc-dopants in the films. Published by Elsevier B.V.
    Relation: THIN SOLID FILMS
    Appears in Collections:[化學工程與材料工程研究所] 期刊論文

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