Modulating dopant segregation in floating-zone silicon growth in magnetic fields using rotation

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題名:	Modulating dopant segregation in floating-zone silicon growth in magnetic fields using rotation
作者:	Lan,CW;Liang,MC
貢獻者:	化學工程與材料工程學系
關鍵詞:	CRYSTAL
日期:	1997
上傳時間:	2010-06-29 17:31:09 (UTC+8)
出版者:	中央大學
摘要:	The feasibility of modulating dopant segregation using rotation for floating-zone silicon growth in axisymmetric magnetic fields is investigated through computer simulation. In the model, heat and mass transfer, fluid flow, magnetic fields, melt/solid interfaces, and the free surface are solved globally by a robust finite-volume/Newton's method. Different rotation modes, single-and counter-rotations, are applied to the growth under both axial and cusp magnetic fields. Under the magnetic fields, it is observed that dopant mixing is poor in the quiescent core region of the molten zone, and the weak convection there is responsible for the segregation. Under an axial magnetic field, moderate counter-rotation or crystal rotation improves dopant uniformity. However, excess counter-rotation or feed rotation alone results in more complicated flow structures, and thus induces larger radial segregation. For the cusp fields, rotation can enhance more easily the dopant mixing in the core melt and thus improve dopant uniformity.
關聯:	JOURNAL OF CRYSTAL GROWTH
顯示於類別:	[化學工程與材料工程研究所] 期刊論文

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