中大機構典藏-NCU Institutional Repository-提供博碩士論文、考古題、期刊論文、研究計畫等下載:Item 987654321/26643
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 80990/80990 (100%)
Visitors : 41652280      Online Users : 1682
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/26643


    Title: NUMERICAL INVESTIGATION ON THE BATCH CHARACTERISTICS OF LIQUID ENCAPSULATED VERTICAL BRIDGMAN CRYSTAL-GROWTH
    Authors: LAN,CW;TING,CC
    Contributors: 化學工程與材料工程學系
    Keywords: GRADIENT FREEZE;FLOATING-ZONE;HEAT-TRANSFER;DIRECTIONAL SOLIDIFICATION;LARGE DIAMETER;HIGH-QUALITY;GAAS GROWTH;LEC GROWTH;FLUID-FLOW;SEGREGATION
    Date: 1995
    Issue Date: 2010-06-29 17:33:08 (UTC+8)
    Publisher: 中央大學
    Abstract: Since the liquid encapsulated vertical Bridgman (LEVB) crystal growth is a batch process, it is time dependent in nature. A numerical simulation is conducted to study the unsteady features of the process, including the dynamic evolution of heat flow, growth rate, and interface morphology during crystal growth. The numerical model, which is governed by time-dependent equations for momentum and energy transport, and the conditions for evolution of melt/crystal and melt/encapsulant interfaces, is approximated by a body-fitted coordinate finite-volume method. The resulting differential/algebraic equations are then solved by the ILU (0) preconditioned DASPK code. Sample calculations are mainly conducted for GaAs. Dynamic effects of some process parameters, such as the growth speed, the ambient temperature profile, and ampoule design, are illustrated through calculated results. Due to the heat of fusion release and time-dependent end effects, in some cases a near steady-state operation is not possible. The control of growth front by modifying the ambient temperature profile is also demonstrated. Calculations are also performed for a 4.8 cm diameter InP crystal. The calculated melt/seed interface shape is compared with the measured one from Matsumoto et al. [J. Crystal Growth 132 (1993) 348] and they are in good agreement.
    Relation: JOURNAL OF CRYSTAL GROWTH
    Appears in Collections:[National Central University Department of Chemical & Materials Engineering] journal & Dissertation

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML443View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明