NUMERICAL INVESTIGATION ON THE BATCH CHARACTERISTICS OF LIQUID ENCAPSULATED VERTICAL BRIDGMAN CRYSTAL-GROWTH

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題名:	NUMERICAL INVESTIGATION ON THE BATCH CHARACTERISTICS OF LIQUID ENCAPSULATED VERTICAL BRIDGMAN CRYSTAL-GROWTH
作者:	LAN,CW;TING,CC
貢獻者:	化學工程與材料工程學系
關鍵詞:	GRADIENT FREEZE;FLOATING-ZONE;HEAT-TRANSFER;DIRECTIONAL SOLIDIFICATION;LARGE DIAMETER;HIGH-QUALITY;GAAS GROWTH;LEC GROWTH;FLUID-FLOW;SEGREGATION
日期:	1995
上傳時間:	2010-06-29 17:33:08 (UTC+8)
出版者:	中央大學
摘要:	Since the liquid encapsulated vertical Bridgman (LEVB) crystal growth is a batch process, it is time dependent in nature. A numerical simulation is conducted to study the unsteady features of the process, including the dynamic evolution of heat flow, growth rate, and interface morphology during crystal growth. The numerical model, which is governed by time-dependent equations for momentum and energy transport, and the conditions for evolution of melt/crystal and melt/encapsulant interfaces, is approximated by a body-fitted coordinate finite-volume method. The resulting differential/algebraic equations are then solved by the ILU (0) preconditioned DASPK code. Sample calculations are mainly conducted for GaAs. Dynamic effects of some process parameters, such as the growth speed, the ambient temperature profile, and ampoule design, are illustrated through calculated results. Due to the heat of fusion release and time-dependent end effects, in some cases a near steady-state operation is not possible. The control of growth front by modifying the ambient temperature profile is also demonstrated. Calculations are also performed for a 4.8 cm diameter InP crystal. The calculated melt/seed interface shape is compared with the measured one from Matsumoto et al. [J. Crystal Growth 132 (1993) 348] and they are in good agreement.
關聯:	JOURNAL OF CRYSTAL GROWTH
顯示於類別:	[化學工程與材料工程研究所] 期刊論文

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