Optical Simulation and Fabrication of Nitride-Based LEDs With the Inverted Pyramid Sidewalls

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/28125

Title:	Optical Simulation and Fabrication of Nitride-Based LEDs With the Inverted Pyramid Sidewalls
Authors:	Kuo,CW;Lee,YC;Fu,YK;Tsai,CH;Wu,ML;Chi,GC;Kuo,CH;Tun,CJ
Contributors:	光電科學研究所
Keywords:	LIGHT-EMITTING-DIODES;EXTRACTION EFFICIENCY;SAPPHIRE SUBSTRATE;GAN;SURFACE
Date:	2009
Issue Date:	2010-06-29 19:42:08 (UTC+8)
Publisher:	中央大學
Abstract:	In this study, the numerical and experimental demonstrations for the enhancement of light-extraction efficiency in nitride-based LEDs with randomly inverted pyramid sidewalls (IPSs) by chemical etching of the chip edge are presented. With 20 mA injection current, it was found that forward voltages were 3.69 and 3.75 V while output powers were 7.07 and 8.95 mW for the conventional LED and inverted pyramid sidewall LED, respectively. The larger LED output power is attributed to the increased light-extraction efficiency by IPSs.
Relation:	IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Appears in Collections:	[Graduate Institute of Optics and Photonics] journal & Dissertation

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