中大機構典藏-NCU Institutional Repository-提供博碩士論文、考古題、期刊論文、研究計畫等下載:Item 987654321/28125
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 67621/67621 (100%)
造访人次 : 23101239      在线人数 : 143
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 查询小技巧:
  • 您可在西文检索词汇前后加上"双引号",以获取较精准的检索结果
  • 若欲以作者姓名搜寻,建议至进阶搜寻限定作者字段,可获得较完整数据
  • 进阶搜寻


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/28125


    题名: Optical Simulation and Fabrication of Nitride-Based LEDs With the Inverted Pyramid Sidewalls
    作者: Kuo,CW;Lee,YC;Fu,YK;Tsai,CH;Wu,ML;Chi,GC;Kuo,CH;Tun,CJ
    贡献者: 光電科學研究所
    关键词: LIGHT-EMITTING-DIODES;EXTRACTION EFFICIENCY;SAPPHIRE SUBSTRATE;GAN;SURFACE
    日期: 2009
    上传时间: 2010-06-29 19:42:08 (UTC+8)
    出版者: 中央大學
    摘要: In this study, the numerical and experimental demonstrations for the enhancement of light-extraction efficiency in nitride-based LEDs with randomly inverted pyramid sidewalls (IPSs) by chemical etching of the chip edge are presented. With 20 mA injection current, it was found that forward voltages were 3.69 and 3.75 V while output powers were 7.07 and 8.95 mW for the conventional LED and inverted pyramid sidewall LED, respectively. The larger LED output power is attributed to the increased light-extraction efficiency by IPSs.
    關聯: IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    显示于类别:[光電科學研究所] 期刊論文

    文件中的档案:

    档案 描述 大小格式浏览次数
    index.html0KbHTML427检视/开启


    在NCUIR中所有的数据项都受到原著作权保护.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈  - 隱私權政策聲明