Growth and device performance of GaN Schottky rectifiers

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题名:	Growth and device performance of GaN Schottky rectifiers
作者:	Chyi,JI;Lee,CM;Chuo,CC;Chi,GC;Dang,GT;Zhang,AP;Ren,F;Cao,XA;Pearton,SJ;Chu,SNG;Wilson,RG
贡献者:	電機工程研究所
关键词:	FIELD-EFFECT TRANSISTORS;POWER DEVICES;TEMPERATURE-DEPENDENCE;DIODES;BREAKDOWN;VOLTAGE
日期:	1999
上传时间:	2010-06-29 20:20:33 (UTC+8)
出版者:	中央大學
摘要:	Undoped, 4 mu m thick GaN layers grown by Metal Organic Chemical Vapor Deposition were used for fabrication of high stand off voltage (356 V) Schottky diode rectifiers. The figure of merit V-RB(2)/R-ON, where V-RB is the reverse breakdown voltage and R-ON is the on-resistance, was similar to 4.53 MW-cm(-2) at 25 degrees C. The reverse breakdown voltage displayed a negative temperature coefficient, due to an increase in carrier concentration with increasing temperature. :Secondary Ion Mass Spectrometry measurements showed that Si and O were the most predominant electrically active impurities present the GaN.
關聯:	MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
显示于类别:	[電機工程研究所] 期刊論文

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