Defects in metamorphic InxAl1-xAs (x<0.4) epilayers grown on GaAs substrates

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Title:	Defects in metamorphic InxAl1-xAs (x<0.4) epilayers grown on GaAs substrates
Authors:	Shieh,JL;Chang,MN;Cheng,YS;Chyi,JI
Contributors:	電機工程研究所
Keywords:	MOLECULAR-BEAM EPITAXY;DEEP LEVELS;REDUCTION;LAYERS;SEMICONDUCTORS
Date:	1997
Issue Date:	2010-06-29 20:21:12 (UTC+8)
Publisher:	中央大學
Abstract:	Defects in Si-doped InxAl1-xAs (0<x<0.4) epilayers on GaAs substrates were systematically investigated by deep-level transient spectroscopy. Three electron traps, ranging from 0.22 to 0.89 eV, were observed in InxAl1-xAs grown by molecular beam epitaxy. Their energy levels can be extrapolated from those in the InxAl1-xAs/InP system. A low-temperature-grown buffer layer as well as thermal annealing were found to be capable of reducing the defects in the active layer effectively. (C) 1997 American Institute of Physics.
Relation:	JOURNAL OF APPLIED PHYSICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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