Improvement of current injection of porous silicon

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题名:	Improvement of current injection of porous silicon
作者:	Chen,YA;Liang,NY;Laih,LH;Tsay,WC;Chang,MN;Hong,JW
贡献者:	電機工程研究所
日期:	1997
上传时间:	2010-06-29 20:21:25 (UTC+8)
出版者:	中央大學
摘要:	n-i-p-n hydrogenated amorphous silicon (a-Si:H) layers were deposited onto porous silicon (PS) formed on p-type crystalline silicon (c-Si) by anodization and used to improve the current injection of a PS-based light-emitting diode (LED). The electroluminescence (EL) spectrum for the obtained PS-based LED with n-i-p-n a-Si:H layers showed the similar tendency as that of a photoluminescence (PL) signal for an as-anodized PS. The current conduction mechanisms of this PS-based LED were also studied.
關聯:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
显示于类别:	[電機工程研究所] 期刊論文

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