The integrated optoelectronic receivers, which consist of photoderectors and preamplifiers, are the key components for optical communication systems. In this study, we used the AlGaAs/InGaAs doped-channel heterostructure to fabricate and integrate both MSM-photodetectors(MSM-PDs) and a transimpedance amplifier. Heterostructure doped-channel FETs (DCFETs) have demonstrated a higher current density, a higher gate breakdown and rum-on voltage, and a better linearity, as compared to the MESFETs and HEMTs. These advantages provide an amplifier circuit to achieve a higher responsivity, and the most of all, a wider operation range and a better linearity. A responsivity of 1.92 KV/W was obtained in this configuration, while this value was 0.97 KV/W where the MESFET-type pre-amplifier was used.
