Simulation of amorphous silicon thin-film transistor including adapted Gummel method

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题名:	Simulation of amorphous silicon thin-film transistor including adapted Gummel method
作者:	Tsai,YT;Huang,LC
贡献者:	電機工程研究所
关键词:	MODEL
日期:	1997
上传时间:	2010-06-29 20:21:34 (UTC+8)
出版者:	中央大學
摘要:	This paper presents an adapted Gummel method (AGM) used in the two-dimensional device simulation of an amorphous-silicon (a-Si) thin-film transistor (TFT). Firstly, the AGM for amorphous silicon is developed by modifying the Gummel method (GM) for crystalline silicon. Secondly, the AGM is implemented into a two-dimensional device simulator for the simulation of a-Si TFTs. The simulation results show that the AGM converges well while the GM fails to converge for the simulation of a-Si TFTs. Hence, the AGM is a useful technique for the simulation and analysis of a-Si TFTs.
關聯:	INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS
显示于类别:	[電機工程研究所] 期刊論文

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