Device linearity comparisons between doped-channel and modulation-doped designs in pseudomorphic Al0.3Ga0.7As/In(0.2)Gao(0.8)As heterostructures

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题名:	Device linearity comparisons between doped-channel and modulation-doped designs in pseudomorphic Al0.3Ga0.7As/In(0.2)Gao(0.8)As heterostructures
作者:	Yang,MT;Chan,YJ
贡献者:	電機工程研究所
关键词:	FET;INSULATOR;MODFET;BAND
日期:	1996
上传时间:	2010-06-29 20:22:05 (UTC+8)
出版者:	中央大學
摘要:	The linearities of pseudomorphic Al0.3Ga0.7As/ In0.2Ga0.8As doped-channel FET's were characterized by comparing the characteristics of modulation-doped field-effect transistors (FET's) based on de and microwave evaluations. By using an undoped high-bandgap layer beneath the gate, the so-called parasitic MESFET-type conduction, which is common in HEMT's, can therefore be eliminated in doped-channel designs, Therefore, a wide and flat device performance together with a high current driving capability can be achieved in DCFET's. This linearity improvement in device performance suggests that doped-channel designs are more suitable for application in microwave power devices.
關聯:	IEEE TRANSACTIONS ON ELECTRON DEVICES
显示于类别:	[電機工程研究所] 期刊論文

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