Enhanced carrier and optical confinement of quantum well lasers with graded multi-quantum barriers

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29339

Title:	Enhanced carrier and optical confinement of quantum well lasers with graded multi-quantum barriers
Authors:	Chyi,JI;Gau,JH;Wang,SK;Shieh,JL;Pan,JW
Contributors:	電機工程研究所
Keywords:	MULTIQUANTUM BARRIER;THRESHOLD CURRENT
Date:	1996
Issue Date:	2010-06-29 20:22:11 (UTC+8)
Publisher:	中央大學
Abstract:	The enhancement of electron barrier height by multi-quantum barrier structure is simulated using transfer matrix method. An effective barrier height as high as 5.5 times the classical potential barrier is designed by using five stacks of GaAs/AlAs superlattices. Based on the simulated results, we construct both 0.78 mu m and 1.3 mu m graded-index separate confinement heterostructure lasers with enhanced carrier and optical confinements using graded multi-stack multi-quantum barriers. The threshold current densities of the lasers are estimated to be lower than those of the conventional graded-index separate confinement heterostructure lasers. Higher characteristic temperatures are also expected for these lasers.
Relation:	COMPOUND SEMICONDUCTORS 1995
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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