Enhanced device performance by unstrained In0.3Ga0.7As/In0.29Al0.71As doped-channel FET on GaAs substrates

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Title:	Enhanced device performance by unstrained In0.3Ga0.7As/In0.29Al0.71As doped-channel FET on GaAs substrates
Authors:	Yang,MT;Chan,YJ;Shieh,JL;Chyi,JI
Contributors:	電機工程研究所
Date:	1996
Issue Date:	2010-06-29 20:22:12 (UTC+8)
Publisher:	中央大學
Abstract:	An alternative In0.3Ga0.7As/In0.29Al0.71As heterostructure based on GaAs is proposed, which provides a large conduction-band discontinuity for a better carrier confinement, resulting in a high-carrier density, This unstrained high-In channel achieved a better device performance, as compared with the conventional pseudomorphic channel, which is always limited by the critical thickness. This unstrained channel is also proven to be more stable after a long-term biased-stress.
Relation:	IEEE ELECTRON DEVICE LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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