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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29342


    Title: GaAs-based In0.29Al0.71As/In0.3Ga0.7 as high-electron mobility transistors
    Authors: Chan,YJ;Wu,CS;Chyi,JI;Shieh,JL
    Contributors: 電機工程研究所
    Keywords: SUBSTRATE
    Date: 1996
    Issue Date: 2010-06-29 20:22:15 (UTC+8)
    Publisher: 中央大學
    Abstract: In0.29Al0.71As/In0.3Ga0.7As heterostructures grown on GaAs substrates with a step-graded metamorphic InxCa1-xAs buffer were characterized. Cross-sectional TEM micrographs revealed that an unstrained and dislocation-free In0.3Ga0.7As layer used as a buffer can be obtained. A 0.6-mu m-long gate HEMT based on this heterostructure demonstrated a g(m) of 230 mS/mm, an f(T) of 23 GHz, and an f(max) of 73 GHz. (C) 1996 John Wiley & Sons, Inc.
    Relation: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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