High responsivity a-Si:H bottom-electrode metal-semiconductor-metal photodetector (BMSM-PD)

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Title:	High responsivity a-Si:H bottom-electrode metal-semiconductor-metal photodetector (BMSM-PD)
Authors:	Laih,LH;Chen,YA;Tsay,WC;Hong,JW
Contributors:	電機工程研究所
Date:	1996
Issue Date:	2010-06-29 20:22:17 (UTC+8)
Publisher:	中央大學
Abstract:	A novel simple bottom-electrode metal-semiconductor-metal photodetector (BMSM-PD) with an i-a-Si:H barrier layer and a phosphorus-doped n-a-Si:H light absorbing layer was used to improve the responsivity of MSM-PD. Ar a bias of 10V and an He-Ne laser incident power of 10 mu W, the obtained n-a-Si:H BMSM-PD had a high responsivity of 10A/W, a low dark current density of 2.35pA/mu m(2), and a spectral response peaked at 605 nm.
Relation:	ELECTRONICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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