High-responsivity InGaAs metal-semiconductor-metal photodetectors with semi-transparent Schottky contacts

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题名:	High-responsivity InGaAs metal-semiconductor-metal photodetectors with semi-transparent Schottky contacts
作者:	Yuang,RH;Chyi,JI;Chan,YJ;Lin,W;Tu,YK
贡献者:	電機工程研究所
关键词:	PHOTODIODES
日期:	1996
上传时间:	2010-06-29 20:22:18 (UTC+8)
出版者:	中央大學
摘要:	Novel metal-semiconductor-metal photodetectors (MSM-PDs) with interdigitated semi-transparent Au Schottky contacts have been fabricated on pseudomorphic In0.9Ga0.1P/InP/InGaAs heterostructure grown by low-pressure MOCVD. The responsivity. measured at 1.55 mu m wavelength is greatly enhanced from 0.4 A/W to 0.7 A/W as the thickness of the Au electrodes are decreased to 10 nm. These devices have an extremely linear photoresponse and show no internal gain. The devices with an active region of 100 mu m x 100 mu m, a finger width of 3 mu m, and a finger spacing of 3 mu m exhibit dark currents as low as 16 nA at 10 V. The full-width at half maximum of the temporal response for the device with semi-transparent electrodes is about 85 ps compared to 80 ps for the conventional device with opaque electrodes.
關聯:	COMPOUND SEMICONDUCTORS 1995
显示于类别:	[電機工程研究所] 期刊論文

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