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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29362


    Title: The reduction of impact ionization and improvement of device reliability in heterostructure doped-channel FETs
    Authors: Yang,MT;Chan,YJ;Chang,M
    Contributors: 電機工程研究所
    Keywords: PSEUDOMORPHIC ALGAAS/INGAAS
    Date: 1996
    Issue Date: 2010-06-29 20:22:46 (UTC+8)
    Publisher: 中央大學
    Abstract: Reliability issues of both AlGaAs/ln(0.2)Ga(O.8)As DCFETs and HEMTs were investigated and compared. By placing donors in the conducting channel, this doped-channel approach reduces the field intensity near the heterointerface resulting in a suppression of impact ionization process in the channel. Therefore, a more reliable device characteristics of DCFETs could be expected. The experimental results, through the biasing stress and temperature dependent evaluations, demonstrated a strong correlation between the impact ionization rate and device reliabilities.
    Relation: COMPOUND SEMICONDUCTORS 1995
    Appears in Collections:[電機工程研究所] 期刊論文

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