Theoretical study of the temperature dependence of 1.3-mu m AlGaInAs-InP multiple-quantum-well lasers

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題名:	Theoretical study of the temperature dependence of 1.3-mu m AlGaInAs-InP multiple-quantum-well lasers
作者:	Pan,JW;Chyi,JI
貢獻者:	電機工程研究所
關鍵詞:	INTERVALENCE BAND ABSORPTION;1.3 MU-M;SEMICONDUCTOR-LASERS;THRESHOLD CURRENT;INGAASP LASERS;LAYER;RECOMBINATION;GAIN;PERFORMANCE;T-0
日期:	1996
上傳時間:	2010-06-29 20:22:48 (UTC+8)
出版者:	中央大學
摘要:	The temperature dependence of the differential gain, carrier density, and transparency current density for 1.3-mu m Al-GaInAs-InP multiple-quantum-well lasers has been theoretically studied using the optical gain calculation from 250-380 K. The characteristic temperatures of the carrier density and differential gain at threshold are calculated to be 254 and 206 K, respectively, The Auger current density accounts for more than 50% of the total current density, The leakage current density exhibits the highest temperature sensitivity and becomes an essential part of the total current density at a high temperature. The calculated characteristic temperatures of the transparency and threshold current densities are 106 and 84 K, respectively, which agree well with the reported experimental results.
關聯:	IEEE JOURNAL OF QUANTUM ELECTRONICS
顯示於類別:	[電機工程研究所] 期刊論文

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