DEVICE LINEARITY IMPROVEMENT BY AL0.3GA0.7AS/IN0.2GA0.8AS HETEROSTRUCTURE DOPED-CHANNEL FETS

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题名:	DEVICE LINEARITY IMPROVEMENT BY AL0.3GA0.7AS/IN0.2GA0.8AS HETEROSTRUCTURE DOPED-CHANNEL FETS
作者:	CHAN,YJ;YANG,MT
贡献者:	電機工程研究所
关键词:	POWER
日期:	1995
上传时间:	2010-06-29 20:23:09 (UTC+8)
出版者:	中央大學
摘要:	The linearities of pseudomorphic heterostructure Al0.3Ga0.7As/In0.2Ga0.8As doped-channel FET's (DCFET's) and HEMT's were evaluated by DC and RF testings. Due to the absence of parallel conduction in the doped-channel approach, as compared to the modulation-doped structure, a wide and flat device performance together with a high current density was achieved. This improvement of device linearity suggests that doped-channel designs are suitable for high frequency power device application.
關聯:	IEEE ELECTRON DEVICE LETTERS
显示于类别:	[電機工程研究所] 期刊論文

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