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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29383


    Title: HIGH-PERFORMANCE LARGE-AREA INGAAS MSM PHOTODETECTORS WITH A PSEUDOMORPHIC INGAP CAP LAYER
    Authors: YUANG,RH;SHIEH,HC;CHIEN,YJ;CHAN,YJ;CHYI,JI;LIN,W;TU,YK
    Contributors: 電機工程研究所
    Keywords: SEMICONDUCTOR-METAL PHOTODETECTORS
    Date: 1995
    Issue Date: 2010-06-29 20:23:18 (UTC+8)
    Publisher: 中央大學
    Abstract: We report the fabrication and characteristics of high-performance InGaAs MSM photodetectors with a 300-mu m x 300-mu m square and a 300-mu m-diameter circular detection area, With a pseudomorphic In0.9Ga0.1P cap layer, the detectors exhibit dark current densities less than 1 pA/mu m(2), The responsivity ranges between 0.4 and 0.6 A/W depending on finger spacing, Bandwidth over 1 GHz has been obtained for these large-area detectors, Our results also show that the circular detector exhibits better speed performance as compared to the square one due to its smaller parasitic RC constant.
    Relation: IEEE PHOTONICS TECHNOLOGY LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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