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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29384


    Title: HIGH-PERFORMANCE METAL-SEMICONDUCTOR-METAL PHOTODETECTOR WITH A THIN HYDROGENATED AMORPHOUS-SILICON LAYER ON CRYSTALLINE SILICON
    Authors: LAIH,LH;TSAY,WC;CHEN,YA;JEN,TS;YUANG,RH;HONG,JW
    Contributors: 電機工程研究所
    Keywords: SCHOTTKY
    Date: 1995
    Issue Date: 2010-06-29 20:23:20 (UTC+8)
    Publisher: 中央大學
    Abstract: A thin intrinsic hydrogenated amorphous silicon (i-a-Si:H) layer was used to improve the performance of Si metal-semiconductor-metal photodetectors (MSM-PDs). At a bias of 10V, this a-Si:H MSM-PD had a rise time of 25ps and an FWHM of 55ps for temporal response, a dark current density of 690fA/mu m(2), a responsivity of 0.7 A/W and a spectral response peaking at 700nm.
    Relation: ELECTRONICS LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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