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    題名: HIGH-RESPONSIVITY INGAAS MSM PHOTODETECTORS WITH SEMITRANSPARENT SCHOTTKY CONTACTS
    作者: YUANG,RH;CHYI,JI;CHAN,YJ;LIN,W;TU,YK
    貢獻者: 電機工程研究所
    關鍵詞: PERFORMANCE
    日期: 1995
    上傳時間: 2010-06-29 20:23:21 (UTC+8)
    出版者: 中央大學
    摘要: High-performance metal-semiconductor-metal photodetectors (MSM-PD's) with interdigitated semi-transparent Au Schottky contacts have been fabricated on pseudomorphic In0.9Ga0.1P-InP-InGaAs heterostructure. The responsivity measured at 1.55-mu m wavelength is greatly enhanced from 0.4 A/W to 0.7 A/W as the thickness of the Au electrodes is decreased to 10 mn. This corresponds to a 75% improvement over the conventional MSM-PD's with opaque metal electrodes, With a pseudomorphic InGaP barrier-enhancement layer, these devices exhibit a dark current density as low as 1.6 pA/mu m(2). Extremely linear photoresponse without any internal gain is also observed for these detectors, The full-width at half maximum of the temporal response for the devices with semi-transparent electrodes is about 85 ps compared to 80 ps for the conventional ones.
    關聯: IEEE PHOTONICS TECHNOLOGY LETTERS
    顯示於類別:[電機工程研究所] 期刊論文

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