HIGH-RESPONSIVITY INGAAS MSM PHOTODETECTORS WITH SEMITRANSPARENT SCHOTTKY CONTACTS

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題名:	HIGH-RESPONSIVITY INGAAS MSM PHOTODETECTORS WITH SEMITRANSPARENT SCHOTTKY CONTACTS
作者:	YUANG,RH;CHYI,JI;CHAN,YJ;LIN,W;TU,YK
貢獻者:	電機工程研究所
關鍵詞:	PERFORMANCE
日期:	1995
上傳時間:	2010-06-29 20:23:21 (UTC+8)
出版者:	中央大學
摘要:	High-performance metal-semiconductor-metal photodetectors (MSM-PD's) with interdigitated semi-transparent Au Schottky contacts have been fabricated on pseudomorphic In0.9Ga0.1P-InP-InGaAs heterostructure. The responsivity measured at 1.55-mu m wavelength is greatly enhanced from 0.4 A/W to 0.7 A/W as the thickness of the Au electrodes is decreased to 10 mn. This corresponds to a 75% improvement over the conventional MSM-PD's with opaque metal electrodes, With a pseudomorphic InGaP barrier-enhancement layer, these devices exhibit a dark current density as low as 1.6 pA/mu m(2). Extremely linear photoresponse without any internal gain is also observed for these detectors, The full-width at half maximum of the temporal response for the devices with semi-transparent electrodes is about 85 ps compared to 80 ps for the conventional ones.
關聯:	IEEE PHOTONICS TECHNOLOGY LETTERS
顯示於類別:	[電機工程研究所] 期刊論文

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