HIGH-TEMPERATURE PERFORMANCE OF GA0.51IN0.49P/IN0.2GA0.8AS PSEUDOMORPHIC HEMTS WITH WSIX GATES

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题名:	HIGH-TEMPERATURE PERFORMANCE OF GA0.51IN0.49P/IN0.2GA0.8AS PSEUDOMORPHIC HEMTS WITH WSIX GATES
作者:	CHAN,YJ;YEH,TJ;KUO,JM
贡献者:	電機工程研究所
关键词:	MOCVD
日期:	1995
上传时间:	2010-06-29 20:23:23 (UTC+8)
出版者:	中央大學
摘要:	WSix gate pseudomorphic GaInP/In0.2Ga0.8As HEMTs were fabricated, and evaluated for the purposes of high temperature operations. Based on the high thermal stability of WSi, gates, no significant change in device characteristics was observed for temperatures up to 200 degrees C. Functional devices can still be obtained at 300 degrees C. Comparing with the other gate materials, for example Ti/Au or Al gates, WSix demonstrates the advantages of this highly thermal stable property.
關聯:	SOLID-STATE ELECTRONICS
显示于类别:	[電機工程研究所] 期刊論文

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