CHARACTERISTICS OF IN0.3GA0.7AS/IN0.29AL0.71AS HETEROSTRUCTURES GROWN ON GAAS USING INALAS BUFFERS

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题名:	CHARACTERISTICS OF IN0.3GA0.7AS/IN0.29AL0.71AS HETEROSTRUCTURES GROWN ON GAAS USING INALAS BUFFERS
作者:	CHYI,JI;SHIEH,JL;WU,CS;LIN,RM;PAN,JW;CHAN,YJ;LIN,CH
贡献者:	電機工程研究所
日期:	1994
上传时间:	2010-06-29 20:24:02 (UTC+8)
出版者:	中央大學
摘要:	Device quality In0.29Al0.71As and In0.3Ga0.7As epilayers have been successfully grown on GaAs substrates using a carefully designed InxAl1-xAs multistage strain-relaxed buffer. Cross-sectional transmission electron microscopy has shown that the misfit dislocations are confined in the lower regions of the metamorphic buffer layer. The Hall electron mobility of the modulation doped structure grown on the InAlAs buffer was 6160 and 25379 cm2/V.s with sheet carrier densities of 1.9 x 10(12) and 1.8 x 10(12) cm-2 at 300 and 77 K, respectively. The excellent characteristics of the field-effect transistors fabricated on this structure have indicated its potential for practical applications.
關聯:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
显示于类别:	[電機工程研究所] 期刊論文

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