ELECTROLUMINESCENCE OF A-SIC-H P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH QUANTUM-WELL-INJECTION STRUCTURES

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题名:	ELECTROLUMINESCENCE OF A-SIC-H P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH QUANTUM-WELL-INJECTION STRUCTURES
作者:	JEN,TS;SHIN,NF;TSAY,WC;CHEN,JY;NING,SL;HONG,JW;CHANG,CY
贡献者:	電機工程研究所
关键词:	AMORPHOUS-SILICON
日期:	1994
上传时间:	2010-06-29 20:24:10 (UTC+8)
出版者:	中央大學
摘要:	In order to improve the electroluminescence (EL) characteristics of hydrogenated amorphous silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diodes (TFLEDs), the quantum-well-injection (QWI) structures have been incorporated into their intrinsic (i-) layer. Two types of TFLED were fabricated to study the effect of the incorporated QWI structures on their EL characteristics: the device I contains a step-gap QWI structure of barrier (15 angstrom)/well (45 angstrom)/barrier (15 angstrom) inserted at both the p-i and i-n interfaces, and the device Il has only one graded-gap QWI structure of barrier (10 angstrom)/well (10 angstrom)/barrier (10 angstrom) inserted at the p-i interface. The obtained brightness of device I was about 10 cd/m2 at an injection current density of 1 A/cm2. The emission light of device I was yellow-like as detected by human eyes. Whereas, for device II, the brightness was about 256 cd/m2 at 800 mA/cm2 and an orange light emission was observed.
關聯:	SOLID-STATE ELECTRONICS
显示于类别:	[電機工程研究所] 期刊論文

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