HIGH-TEMPERATURE PERFORMANCE OF GAINP AND ALINP HEMTS WITH WSIX GATES

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Title:	HIGH-TEMPERATURE PERFORMANCE OF GAINP AND ALINP HEMTS WITH WSIX GATES
Authors:	CHAN,YJ;KUO,JM
Contributors:	電機工程研究所
Keywords:	TRANSISTORS;MOCVD
Date:	1994
Issue Date:	2010-06-29 20:24:17 (UTC+8)
Publisher:	中央大學
Abstract:	Both GaInP/In0.2Ga0.8As and AlInP/In0.2Ga0.8As HEMT's were fabricated with WSix gates and evaluated at high temperature operations. Based on the high stability of WSix gates, both devices functioned at temperature up to 300 degrees C. GaInP HEMT's showed a g(m) reduction from 176 mS/mm at 25 degrees C to 97 mS/mm at 300-degrees C, while V-th shifted from -1.44 V to -3.31 V. AlInP HEMT's also showed a g(m) decrease from 135 mS/mm at 25 degrees C to 70 mS/mm at 300 degrees C, while V-th shifted from -0.4 V to -0.84 V. Both of these devices with WSix gates offer a potential applications to high power and high temperature operations.
Relation:	GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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