HYDROGENATED AMORPHOUS-SILICON CARBIDE P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH BARRIER LAYERS INSERTED AT P-I INTERFACE

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题名:	HYDROGENATED AMORPHOUS-SILICON CARBIDE P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH BARRIER LAYERS INSERTED AT P-I INTERFACE
作者:	JEN,TS;PAN,JW;SHIN,NF;TSAY,WC;HONG,JW;CHANG,CY
贡献者:	電機工程研究所
关键词:	SOLAR-CELL;EFFICIENCY
日期:	1994
上传时间:	2010-06-29 20:24:18 (UTC+8)
出版者:	中央大學
摘要:	To improve the electroluminescence (EL) intensity of the hydrogenated amorphous silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diode (TFLED), a barrier-layer (BL) structure had been inserted at its p-i interface and used to enhance the hole injection efficiency of TFLED under forward-bias operation. Two TFLEDs with different BL structures were studied. The device I had a 25 Angstrom A i-type single-barrier structure and the device II had an i-type double-barrier structure of barrier (10 Angstrom A)/well(10 Angstrom A)/barrier(10 Angstrom A). The obtainable brightness of device I was 342 cd/m(2) at an injection current density of 600 mA/cm(2). On the other hand, the device II had a brightness of 256 cd/ m(2) at 800 mA/cm(2). These brightnesses were about 3 orders of magnitude higher than that of a basic a-SiC:H p-i-n TFLED.
關聯:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
显示于类别:	[電機工程研究所] 期刊論文

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