In0.49Ga0.15P/In0.15Ga0.85As heterostructure pulsed doped-channel FETs were fabricated and evaluated by DC and microwave measurements. This pulsed doped-channel approach provides a higher carrier density and a higher breakdown voltage, as compared to the conventional modulation-doped approach. A g(m) of 207mS/mm, an f(T) of 16.7GHz, and an f(max) of 31.6GHz, were obtained with a 1 mum-long gate at 300K.
