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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29421


    Title: INVESTIGATION OF NEW NARROW-BANDWIDTH A-SI-H PHOTODETECTOR
    Authors: SHIN,NF;HONG,JW;WU,YF;JEN,TS;CHANG,CY
    Contributors: 電機工程研究所
    Keywords: BULK BARRIER PHOTOTRANSISTOR;EFFICIENCY;DETECTOR
    Date: 1994
    Issue Date: 2010-06-29 20:24:21 (UTC+8)
    Publisher: 中央大學
    Abstract: A narrow-bandwidth hydrogenated amorphous silicon (a-Si : H) photodetector with a basic structure of Al/n+-i-p+-i-n-i-p-i-n+/ITO/glass has been investigated. The spectral response of this new photodetector was found to be affected by the absorption coefficient of a-Si:H material, surface recombination current, device layer thicknesses, and applied bias. The spectral response of this device reveals a measured minimum FWHM of 58 nm at zero volt bias. The peak wavelength in the visible spectrum can be shifted from 400 nm (purple) to 550 nm (green) by decreasing the bias voltage from 5 to 0 V. The optoelectronic characteristics of this photodetector fit theoretically using suitable quantitative estimates.
    Relation: IEE PROCEEDINGS-OPTOELECTRONICS
    Appears in Collections:[電機工程研究所] 期刊論文

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