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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29422


    Title: LOW DARK CURRENT AND HIGH LINEARITY INGAAS MSM PHOTODETECTORS
    Authors: CHYI,JI;WEI,TS;HONG,JW;LIN,W;TU,YK
    Contributors: 電機工程研究所
    Keywords: HIGH-PERFORMANCE;INP
    Date: 1994
    Issue Date: 2010-06-29 20:24:23 (UTC+8)
    Publisher: 中央大學
    Abstract: InGaAs metal-semiconductor-metal photodetectors with various barrier enhancement layers have been investigated. The responsivity at 1.55 mum wavelength varies between 0.21 and 0.43 A/W depending on layer structure, bias voltage and photosensitive area. Using a pseudomorphic In0.9Ga0.1P cap layer on InP for Schottky contacts, devices exhibit dark current densities as low as 44 muA/cm2. The responsivity is also much more linear than those of conventional devices with respect to both bias voltage and incident optical power level.
    Relation: ELECTRONICS LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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