English  |  正體中文  |  简体中文  |  Items with full text/Total items : 68069/68069 (100%)
Visitors : 23129871      Online Users : 249
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29432


    Title: UNSTRAINED IN0.3GA0.7AS/IN0.29AL0.71AS RESONANT-TUNNELING DIODES GROWN ON GAAS
    Authors: HWANG,HP;SHIEH,JL;LIN,RM;CHYI,JI;TU,SL;PENG,CK;YANG,SJ
    Contributors: 電機工程研究所
    Keywords: TUNNELING DIODES;BARRIERS
    Date: 1994
    Issue Date: 2010-06-29 20:24:39 (UTC+8)
    Publisher: 中央大學
    Abstract: The authors investigate the current-voltage characteristics Of In0.3Ga0.7As/In0.29Al0.71As double-barrier resonant tunnelling diodes grown on GaAs substrates. These devices exhibit peak-to-valley current ratios as high as 7.6 and 19.5 at room temperature and 77K, respectively. Two negative differential resistance regions are also observed for devices with larger well width. These results have shown that a high quality epilayer can be obtained despite the large lattice mismatch between In0.3Ga0.7As and GaAs.
    Relation: ELECTRONICS LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML400View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明