CARBON PLUS ARGON COIMPLANTATION FOR GAAS P-CHANNEL METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

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題名:	CARBON PLUS ARGON COIMPLANTATION FOR GAAS P-CHANNEL METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
作者:	CHAN,YJ;CHEN,CH
貢獻者:	電機工程研究所
關鍵詞:	MOLECULAR-BEAM EPITAXY
日期:	1993
上傳時間:	2010-06-29 20:24:45 (UTC+8)
出版者:	中央大學
摘要:	Carbon (C), based on its high carrier density and low diffusivity, has been applied extensively in GaAs devices, where p-active layers are required. In this study, we used C as an implant source to form p-type active layers, rather than using the conventional epitaxial approach. The dopant activation increased dramatically if an additional argon (Ar) implantation was used. p-channel GaAs metal-semiconductor field-effect transistors were fabricated with this C plus Ar co-implantation technique and demonstrated a promising improvement on device performance.
關聯:	APPLIED PHYSICS LETTERS
顯示於類別:	[電機工程研究所] 期刊論文

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